Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor

Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor This integrated device represents a new level of safety and board−space reduction by combining the 20 V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated product provides higher efficiency a

文件：162.7 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor

Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor This integrated device represents a new level of safety and board−space reduction by combining the 20 V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated product provides higher efficiency a

文件：162.7 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

集成式功率 MOSFET，带 PNP 低饱和压开关晶体管

This integrated device represents a new level of safety and board-space reduction by combining the 20 V P-Channel with a PNP Silicon Low VCE(sat) switching transistor.This newly integrated product provides higher efficiency and accuracy for battery powered portable electronics. • Low RDS(on) (MOSFET) and Low VCE(sat) (Transistor)\n• Higher Efficiency Extending Battery Life\n• Logic Level Gate Drive (MOSFET)\n• Performance DFN Package;

ONSEMI

安森美半导体

Package：8-VDFN 裸露焊盘；包装：管件 类别：分立半导体产品 晶体管 - 特殊用途 描述：IC MOSFET W/PNP SW TRANS 8-DFN

ONSEMI

安森美半导体