Overvoltage Protection IC with Integrated MOSFET

文件：59.77 Kbytes 页数：5 Pages

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Overvoltage Protection IC with Integrated MOSFET

文件：59.77 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Overvoltage Protection IC with Integrated 12 V, 600 mA, 100 mOhm Dual P-Channel MOSFET

This device represents a new level of safety and integration by combining the NCP304 overvoltage protection circuit (OVP) with a -12 V P-Channel Power MOSFET.It is specifically designed to protect sensitive electronic circuitry from overvoltage transients and power supply faults.During such hazardou • Overvoltage Turn-Off Time Less Than 20µs\n• Accurate Voltage Threshold of 4.5 V, Nominal\n• High Accuracy Undervoltage Threshold of 2.0 %\n• -12 V Integrated P-Channel Power MOSFET\n• Low RDS(on) = 75 mΩ @ -4.5 V\n• Maximum Solder Reflow Temperature @ 260°C\n• Low Profile 2.0 x 2.0 mm DFN Pack;

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Package：6-WDFN 裸露焊盘；包装：卷带（TR） 类别：电路保护 TVS - 混合技术 描述：IC OVP W/P-CH MOSFET WDFN6 2X2

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安森美半导体