Low Profile Overvoltage Protection IC with Integrated MOSFET

ONSEMI

安森美半导体

Low Profile Overvoltage Protection IC with Integrated MOSFET

文件：110.96 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Package：8-UFLGA 裸焊盘；包装：卷带（TR） 类别：集成电路（IC） 电源管理 - 专用 描述：IC OVP LOW PRO W/MOSFET 8-TLLGA

ONSEMI

安森美半导体

LOW PROFILE LINE MATCHING TRANSFORMER

文件：128.9 Kbytes 页数：5 Pages

ETAL

Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Competitive VF 1.3V at rated current  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249

文件：358.22 Kbytes 页数：5 Pages

PANJIT

強茂

Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Low Switching Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Application  PFC, UPS, PV

文件：431.1 Kbytes 页数：5 Pages

PANJIT

強茂