Power MOSFET 30 V, 64 A, Single N?묬hannel, WDFN8

Power MOSFET 30 V, 64 A, Single N−Channel, WDFN8 Features • Integrated Schottky Diode • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free and are RoHS Compliant Applications

文件：126.29 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET

文件：89.99 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET 30 V, 64 A, Single N?묬hannel, WDFN8

Power MOSFET 30 V, 64 A, Single N−Channel, WDFN8 Features • Integrated Schottky Diode • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free and are RoHS Compliant Applications

文件：126.29 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

3.5mm Female Bulkhead Connector Clamp/Solder Attachment For PE-SR402AL, PE-SR402FL, RG402

文件：261.89 Kbytes 页数：2 Pages

PASTERNACK

Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit and Driver Circuit ● AEC-Q101 Qualified (Note1) ● Including two devices in US6 (ultra super mini type with 6 leads) ● With built-in bias resistors ● Simplify circuit design ● Reduce a quantity of parts and manufacturing process and miniaturize eq

文件：152.77 Kbytes 页数：6 Pages

TOSHIBA

东芝