Power MOSFET 30 V, 2.5 A, Single N?묬hannel, SOT??3

Features • Leading Planar Technology for Low Gate Charge / Fast Switching • 4.5 V Rated for Low Voltage Gate Drive • SOT−23 Surface Mount for Small Footprint (3 x 3 mm) • Pb−Free Package is Available Applications • DC−DC Conversion • Load/Power Switch for Portables • Load

文件：70.25 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power MOSFET 30 V, 2.5 A, Single N?묬hannel, SOT??3

Features • Leading Planar Technology for Low Gate Charge / Fast Switching • 4.5 V Rated for Low Voltage Gate Drive • SOT−23 Surface Mount for Small Footprint (3 x 3 mm) • Pb−Free Package is Available Applications • DC−DC Conversion • Load/Power Switch for Portables • Load

文件：70.25 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：1.33233 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：1.33233 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Power MOSFET

文件：97.86 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

N-Channel 30-V (D-S) MOSFET

文件：1.02567 Mbytes 页数：9 Pages

VBSEMI

微碧半导体