首页 >NTR4503NT1G>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

NTR4503NT1G

Power MOSFET 30 V, 2.5 A, Single N?묬hannel, SOT??3

Features • Leading Planar Technology for Low Gate Charge / Fast Switching • 4.5 V Rated for Low Voltage Gate Drive • SOT−23 Surface Mount for Small Footprint (3 x 3 mm) • Pb−Free Package is Available Applications • DC−DC Conversion • Load/Power Switch for Portables • Load

文件:70.25 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

NTR4503NT1G

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件:1.33233 Mbytes 页数:9 Pages

VBSEMI

微碧半导体

NTR4503NT1G

Power MOSFET

文件:97.86 Kbytes 页数:5 Pages

ONSEMI

安森美半导体

NTR4503NT1G

N-Channel 30-V (D-S) MOSFET

文件:1.02567 Mbytes 页数:9 Pages

VBSEMI

微碧半导体

NTR4503NT1G_V01

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件:1.33233 Mbytes 页数:9 Pages

VBSEMI

微碧半导体

详细参数

  • 型号:

    NTR4503NT1G

  • 功能描述:

    MOSFET 30V 2.5A N-Channel

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
Son
19+
SOT-23
10330
询价
ON/安森美
24+
SOT-23
30000
只做正品原装现货
询价
ON/安森美
25+
SOT-23
32000
ON/安森美全新特价NTR4503NT1G即刻询购立享优惠#长期有货
询价
ON
15+
原厂原装
51000
进口原装现货假一赔十
询价
ON
16+/17+
SOT-23
3500
原装正品现货供应56
询价
ON
24+
SOT23
23000
全新原装现货,量大特价,原厂正规渠道!
询价
ON
25+
18000
原装正品!!!优势库存!0755-83210901
询价
ON
1634
SOT23
21000
全新原装公司现货
询价
ON
21+
SOT-23
6000
十年信誉,只做原装,有挂就有现货!
询价
ON/安森美
22+
SOT-23
8000
原装正品现货假一罚十
询价
更多NTR4503NT1G供应商 更新时间2025-12-5 16:04:00