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NTS4101PT1G

Power MOSFET -20 V, -1.37 A, Single P-Channel, SC-70

ONSEMION Semiconductor

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ONSEMI

NTS4101PT1G

Power MOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NTS4101PT1G

P-Channel 20 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

NTHS4101PT1

PowerMOSFET-20V,6.7A,P-ChannelChipFET-TM

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NTHS4101PT1

PowerMOSFET-20V,6.7A,P-ChannelChipFET

ONSEMION Semiconductor

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ONSEMI

NTHS4101PT1

PowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NTHS4101PT1G

PowerMOSFET-20V,6.7A,P-ChannelChipFET-TM

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NTHS4101PT1G

PowerMOSFET-20V,6.7A,P-ChannelChipFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NTHS4101PT1G

PowerMOSFET

ONSEMION Semiconductor

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ONSEMI

NTR4101PT1

TrenchPowerMOSFET-20V,SingleP-Channel,SOT-23

Features •Leading−20VTrenchforLowRDS(on) •−1.8VRatedforLowVoltageGateDrive •SOT−23SurfaceMountforSmallFootprint •Pb−FreePackageisAvailable Applications •Load/PowerManagementforPortables •Load/PowerManagementforComputing •ChargingCircuitsandBatteryProte

ONSEMION Semiconductor

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ONSEMI

NTR4101PT1

TrenchPowerMOSFET??0V,SingleP?묬hannel,SOT??3

ONSEMION Semiconductor

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ONSEMI

NTR4101PT1G

TrenchPowerMOSFET??0V,SingleP?묬hannel,SOT??3

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NTR4101PT1G

TrenchPowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NTR4101PT1G

TrenchPowerMOSFET-20V,SingleP-Channel,SOT-23

Features •Leading−20VTrenchforLowRDS(on) •−1.8VRatedforLowVoltageGateDrive •SOT−23SurfaceMountforSmallFootprint •Pb−FreePackageisAvailable Applications •Load/PowerManagementforPortables •Load/PowerManagementforComputing •ChargingCircuitsandBatteryProte

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NTR4101PT1G

P-Channel20-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitch •PASwitch •DC/DCConverters

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

NTR4101PT1G

MOSFET–Power,SingleP-Channel,Trench,SOT-23-20V

Features •Leading−20VTrenchforLowRDS(on) •−1.8VRatedforLowVoltageGateDrive •SOT−23SurfaceMountforSmallFootprint •NTRVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 QualifiedandPPAPCapable •TheseDevices

ONSEMION Semiconductor

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ONSEMI

NTRV4101PT1G

P-Channel20-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitch •PASwitch •DC/DCConverters

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

NTRV4101PT1G

TrenchPowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NTRV4101PT1G

MOSFET–Power,SingleP-Channel,Trench,SOT-23-20V

Features •Leading−20VTrenchforLowRDS(on) •−1.8VRatedforLowVoltageGateDrive •SOT−23SurfaceMountforSmallFootprint •NTRVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 QualifiedandPPAPCapable •TheseDevices

ONSEMION Semiconductor

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ONSEMI

NTS4101PT1

PowerMOSFET

ONSEMION Semiconductor

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ONSEMI

详细参数

  • 型号:

    NTS4101PT1G

  • 功能描述:

    MOSFET -20V -1.37A P-Channel

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
ADI
23+
TSSOP20
12000
只做原装,公司现货,价优,放心采购
询价
ON
2245+
SOT-323-3
30000
原装正品,优势价格,实单支持!
询价
ON/安森美
22+
SOD323
120000
原装正品
询价
ON/安森美
23+
SOT-323
20000
热卖优势现货
询价
ON
16+
SOT-323
35500
进口原装现货/价格优势!
询价
ON/安森美
SOT-323
88800
1902
只做原装正品,现货
询价
ON/安森美
2019+
SOT-323
78550
原厂渠道 可含税出货
询价
ON/安森美
20+
SOT-323
5500
代理库存,房间现货,有挂就是现货
询价
ON/安森美
21+
NA
18000
只做原装,假一罚十
询价
ON
21+
SOT23
63000
询价
更多NTS4101PT1G供应商 更新时间2024-4-27 13:20:00