肖特基整流器，低正向电压，双，20A，120V

The NTST20120CTG is our new 20A 120V Very Low Forward Voltage Trench-based Dual Schottky Rectifier.This new technology allows lower forward voltage drop without the high reverse leakage tradeoff experienced with planar schottky rectifiers.This platform also provides very stable switching characteris • Fine Lithography Trenchbased Schottky Technology for Very Low Forward Voltage\n• Fast Switching with Exceptional Temperature Stability\n• Low Power Loss and Lower Operating Temperature\n• Higher Efficiency for Achieving Regulatory Complianc\n• High Surge Capability\n• PbFree Packages are Available;

ONSEMI

安森美半导体

Very Low Forward Voltage Trench-based Schottky Rectifier

文件：89.66 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Package：TO-220-3；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 120V TO220

ONSEMI

安森美半导体

Very Low Forward Voltage Trench-based Schottky Rectifier

Very Low Forward Voltage Trench-based Schottky Rectifier Exceptionally Low VF = 0.557 V at IF = 5 A Features • Fine Lithography Trench−based Schottky Technology for Very Low Forward Voltage and Low Leakage • Fast Switching with Exceptional Temperature Stability • Low Power Loss and Lower Oper

文件：86.31 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Competitive VF 1.4V at rated current  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249

文件：446.92 Kbytes 页数：5 Pages

PANJIT

強茂

ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER

Features  Ideal for automated placement  Ultra low forward voltage drop, low power loss  High efficiency operation  Low thermal resistance  Easy pick and place package suitable for automated handling  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound a

文件：239.61 Kbytes 页数：4 Pages

PANJIT

強茂