NTMTS0D6N04C

Power MOSFET 40 V, 0.48 m, 533 A, Single N?묬hannel

NTMTS0D6N04CL

Single N-Channel Power MOSFET 40V, 554.5A, 0.42mΩ, PQFN 8x8; • Very Low RDS(on), Shielded Gate Trench Technology\n• Minimize conduction losses\n• Low Profile PQFN 8x8 package\n• High peak current and low parasitic inductance\n• Maximum junction temperature of 175C\n• Offers a wider design margin for thermally challenged applications\n• RoHS Compliant\n;

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

NTMTS0D6N04CL

Power MOSFET 40 V, 0.42 m, 554.5 A, Single N?묬hannel

NTMTS0D6N04CLTXG

Marking：0D6N04CL；Package：POWER88；Power MOSFET 40 V, 0.42 m, 554.5 A, Single N?묬hannel

NTMTS0D6N04CTXG

Marking：0D6N04C；Package：POWER88；Power MOSFET 40 V, 0.48 m, 533 A, Single N?묬hannel

NTMTS0D6N04CTXG

MOSFET T6 40V SG PQFN8x8 EXPANSI;