Power MOSFET 40 V, 0.42 m, 554.5 A, Single N?묬hannel

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丝印：0D6N04CL；Package：POWER88；Power MOSFET 40 V, 0.42 m, 554.5 A, Single N?묬hannel

文件：316.39 Kbytes 页数：8 Pages

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安森美半导体

Single N-Channel Power MOSFET 40V, 554.5A, 0.42mΩ, PQFN 8x8

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. • Very Low RDS(on), Shielded Gate Trench Technology\n• Minimize conduction losses\n• Low Profile PQFN 8x8 package\n• High peak current and low parasitic inductance\n• Maximum junction temperature of 175C\n• Offers a wider design margin for thermally challenged applications\n• RoHS Compliant;

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安森美半导体

Power MOSFET 40 V, 0.48 m, 533 A, Single N?묬hannel

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MOSFET - Power, Single N-Channel, STD Gate, SO8-FL 40 V, 0.57 m, 380 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5x6 mm) with Compact Design • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Bat

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安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 0.48 m, 533 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Wettable Flank Plated for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Fr

文件：382.52 Kbytes 页数：7 Pages

ONSEMI

安森美半导体