Power MOSFET 30 V, 59 A, Single N?묬hannel, SO??FL

Power MOSFET 30 V, 59 A, Single N−Channel, SO−8FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Low RG • These are Pb−Free Devices* Applications • Refer to Application Note AND8195/D

文件：144.49 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET 30 V, 59 A, Single N?묬hannel, SO??FL

Power MOSFET 30 V, 59 A, Single N−Channel, SO−8FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Low RG • These are Pb−Free Devices* Applications • Refer to Application Note AND8195/D

文件：144.49 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET 30 V, 59 A, Single N?묬hannel, SO??FL

Power MOSFET 30 V, 59 A, Single N−Channel, SO−8FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Low RG • These are Pb−Free Devices* Applications • Refer to Application Note AND8195/D

文件：144.49 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

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文件：122.12 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

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文件：257.25 Kbytes 页数：2 Pages

PASTERNACK

65-W TRIPLE OUTPUT ISOLATED DC/DC CONVERTER FOR DSL APPLICATIONS

文件：221.46 Kbytes 页数：14 Pages

TI

德州仪器