Power MOSFET 20 V, 285 mA, N?묬hannel with ESD Protection, SOT??23

Features • Enables High Density PCB Manufacturing • 44 Smaller Footprint than SC−89 and 38 Thinner than SC−89 • Low Voltage Drive Makes this Device Ideal for Portable Equipment • Low Threshold Levels, VGS(TH)

文件：60.56 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Power MOSFET

文件：134.71 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Power MOSFET 20 V, 285 mA, N?묬hannel with ESD Protection, SOT??23

Features • Enables High Density PCB Manufacturing • 44 Smaller Footprint than SC−89 and 38 Thinner than SC−89 • Low Voltage Drive Makes this Device Ideal for Portable Equipment • Low Threshold Levels, VGS(TH)

文件：60.56 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Power MOSFET 20 V, 285 mA, N?묬hannel with ESD Protection, SOT??23

Features • Enables High Density PCB Manufacturing • 44 Smaller Footprint than SC−89 and 38 Thinner than SC−89 • Low Voltage Drive Makes this Device Ideal for Portable Equipment • Low Threshold Levels, VGS(TH)

文件：60.56 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Power MOSFET

文件：134.71 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Power MOSFET

文件：134.71 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Power MOSFET

文件：134.71 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

单 N 沟道，小信号 MOSFET，带 ESD 防护，20V，285mA，3.4Ω

Power MOSFET 20 V, 285 mA, N-Channel with ESD Protection, SOT-723 • Enables High Density PCB Manufacturing\n• 44% Smaller Footprint than SC-89 and 38% Thinner than SC-89\n• Low Voltage Drive Makes this Device Ideal for Portable Equipment\n• Low Threshold Levels, VGS(TH) \n• Low Profile (\n• Operated at Standard Logic Level Gate Drive, Facilitating Future M;

ONSEMI

安森美半导体