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NTH4L023N065M3S中文资料Silicon Carbide (SiC) MOSFET – EliteSiC, 23 mohm, 650 V, M3S, TO-247-4L数据手册ONSEMI规格书
NTH4L023N065M3S规格书详情
描述 Description
The new family of 650V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.
特性 Features
• TO-247-4L Package with Kelvin source configuration
• Excellent FOM [ = Rdson * Eoss ]
• Ultra Low Gate Charge (QG(tot) = 69 nC)
• High Speed Switching with Low Capacitance (Coss = 153 pF)
• 15V to 18V Gate Drive
• New M3S technology: 23 mohm RDS(ON) with low Eon and Eoff losses
• 100% Avalanche Tested
• Halide Free and RoHS Compliant
应用 Application
• Industrial
• Cloud system
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO2474 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
ON(安森美) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
ON(安森美) |
23+ |
标准封装 |
5000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
询价 | ||
ON/安森美 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
询价 | |||
ON(安森美) |
2447 |
TO-247-4 |
115000 |
450个/管一级代理专营品牌!原装正品,优势现货,长期 |
询价 | ||
ON(安森美) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 | ||
ON |
24+ |
NA |
3000 |
进口原装 假一罚十 现货 |
询价 | ||
ON/安森美 |
2130+ |
TO-247 |
9000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ON/安森美 |
2023+ |
TO-247 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
询价 | ||
onsemi |
2025+ |
TO-247-4 |
55740 |
询价 |
