Industrial Rectifiers

NTE

Power MOSFET 40 V, 123 A, Single N?묬hannel DPAK

文件：116.93 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET 40 V, 123 A, Single N?묬hannel DPAK

Features • Low RDS(on) to Minimize Conduction Losses • MSL 1/260°C • AEC Q101 Qualified and PPAP Capable • 100 Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drivers • Pump Drivers for Automotive Braking, Steering and Other

文件：217.46 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 123A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.7mΩ(Max)@VGS= 10V DESCRIPTION ·Power Supplies ·Inductive Loads ·Power Motor Control

文件：298.38 Kbytes 页数：2 Pages

ISC

无锡固电