Silicon Bridge Rectifier, Single-Phase, 25 Amp

Features: ● Superior Thermal Design ● Surge Overload Rating: 400A (Peak) ● Hole Through for #8 Screw ● Silverplated Copper Leads

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NTE

Bridge Rectifiers

NTE

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE

DESCRIPTION The NX5322 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s. FEATURES • Optical output power Po = 5.0 mW • Low threshold current lth = 7 mA • Differential

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NEC

瑞萨

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE

文件：190.24 Kbytes 页数：7 Pages

CEL

LASER DIODE

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5322 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s. APPLICATIONS • S

文件：245 Kbytes 页数：9 Pages

RENESAS

瑞萨