Silicon Controlled Rectifier (SCR) 4 Amp, Sensitive Gate

Description: The NTE5411 through NTE5416 are PNPN silicon controlled rectifier (SCR) devices designed for high volume consumer applications such as temperature, light, and speed control: process and remote control, and warning systems where reliability of operation is important. Features:

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NTE

Phase Control SCRs

NTE

Power MOSFET 80 Amps, 60 Volts N-Channel D2PAK, TO-220

文件：148.65 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET 80 Amps, 60 Volts N-Channel D2PAK, TO-220

文件：148.65 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

30V P-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@-10V,ID@-10A

文件：590.45 Kbytes 页数：7 Pages

PANJIT

強茂