SCRs

NTE

Integrated Audio Amplifier Systems

文件：260.32 Kbytes 页数：11 Pages

INTERSIL

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRW54001 is Designed for Classs A and AB Amplifier Applications Up to 2.0 GHz. FEATURES: • Omnigold™ Metalization System • Implanted ballast resistors • Common-Emitter

文件：17.09 Kbytes 页数：1 Pages

ASI

MICROWAVE LINEAR POWER TRANSISTORS

The RF Line Microwave Linear Power Transistors . . . designed primarily for large–signal output and driver amplifier stages in the 1.0 to 4.0 GHz frequency range. • Designed for Class A or AB, Common–Emitter Linear Power Amplifiers • Specified 20 Volt, 2.0 GHz Characteristics: Output Power

文件：62.6 Kbytes 页数：4 Pages

MOTOROLA

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