Silicon Controlled Rectifier (SCR) 4 Amp Sensitive Gate

Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be switched from off–state to conduction by a current pulse applied to the gate terminal. They are

文件：25.91 Kbytes 页数：2 Pages

NTE

Silicon Controlled Rectifier (SCR) 4 Amp Sensitive Gate

Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be switched from off–state to conduction by a current pulse applied to the gate terminal. They are

文件：25.91 Kbytes 页数：2 Pages

NTE

60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@8A

文件：521.7 Kbytes 页数：6 Pages

PANJIT

強茂

60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@8A

文件：494.87 Kbytes 页数：6 Pages

PANJIT

強茂

2-FUCTION, 4-DIGIT VF AUTOMOTIVE CLOCKS

FEATURES ■ Push-button Time Tone Setting ■ Variable Pulse-Width Display Dimming ■ 12- or 24-Hour Timekeeping Option ■ Rollover Protection on Minutes Set ■ High Noise Immunity ■ Diode Protection on all Inputs ■ RFI/EMI Minimized

文件：717.25 Kbytes 页数：6 Pages

ALLEGRO