Silicon Controlled Rectifier (SCR) 8 Amp

Description: The NTE5480 through NTE5487 are multi–purpose PNPN silicon controlled rectifiers in a TO64 type package suited for industrial and consumer applications. These 8 amp devices are available in voltages ranging from 25V to 600V. Features: • Uniform Low–Level Noise–Immune Gate T

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NTE

N-channel field-effect transistors

DESCRIPTION N-channel, symmetrical, silicon junction FETs in a surface-mountable SOT23 envelope. Intended for use in VHF/UHF amplifiers, oscillators and mixers. FEATURES • Low noise • Interchangeability of drain and source connections • High gain.

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PHI

飞利浦

DC-2400 MHz 3.5V SiGe Amplifier

Product Description Stanford Microdevices’ SGA-5486 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 65

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STANFORD

DC-3500 MHz, Cascadable SiGe HBT MMIC Amplifier

Product Description The SGA-5486 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of

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SIRENZA