NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRW54001 is Designed for Classs A and AB Amplifier Applications Up to 2.0 GHz. FEATURES: • Omnigold™ Metalization System • Implanted ballast resistors • Common-Emitter

文件：17.09 Kbytes 页数：1 Pages

ASI

MICROWAVE LINEAR POWER TRANSISTORS

The RF Line Microwave Linear Power Transistors . . . designed primarily for large–signal output and driver amplifier stages in the 1.0 to 4.0 GHz frequency range. • Designed for Class A or AB, Common–Emitter Linear Power Amplifiers • Specified 20 Volt, 2.0 GHz Characteristics: Output Power

文件：62.6 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

NPN SILICON RF POWER TRANSISTOR

ASI Semiconductor

Integrated Audio Amplifier Systems

文件：546.43 Kbytes 页数：11 Pages

RENESAS

瑞萨

Integrated Audio Amplifier Systems

文件：260.32 Kbytes 页数：11 Pages

INTERSIL

Integrated Audio Amplifier Systems

文件：546.43 Kbytes 页数：11 Pages

RENESAS

瑞萨