NTE5008SM

Zener Diode, 300mW 짹5 Tolerance

Features: ZenerVoltage3.3Vto24V SOT–23TypeSurfaceMountPackage AbsoluteMaximumRatings: MaximimRepetitivePeakForwardCurrent,IFRM..........................250mA MaximimRepetitivePeakWorkingCurrent,IZRM..................

NX5008NBKH

50V,N-channelTrenchMOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmallDFN0606-3 (SOT8001)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Lowthresholdvoltage •Veryfastswitching •TrenchMOSFETte

NX5008NBKM

50V,N-channelTrenchMOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmallDFN1006-3 (SOT883)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Lowthresholdvoltage •Veryfastswitching •TrenchMOSFETtec

NX5008NBKMYL

60VN-ChannelMosfetWithESD

Application ®Dictlogicevelinterface:TTLICMOS ®Divers:rays,solenoids,lamps,hammersdisplay, memories,transistors,tc. @Batteryoperatedsystems ®Solid-staterelays

OM5008ST

HERMETICJEDECTO-257AAHIGHEFFICIENCY,SOFTRECOVERYRECTIFIER

OM5008ST

14Amp,400&600Volts,35nsectrr

P5008NL

POWERTRANSFORMERS

PB5008

EnhancedisoCinkTMBridgeRectifiers

FEATURES •ULrecognitionfilenumberE312394(QQQX2) UL1557(see*) •Enhancedhigh-currentdensitysinglein-line package •Superiorthermalconductivity •Glasspassivatedchipjunction •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:fordefinitionsofcompli

PB5008

EnhancedisoCinkBridgeRectifiers

PB5008

EnhancedisoCinkTMBridgeRectifiers