N-Channel Silicon JFET Transistor AF Amplifier/Chopper/Switch

N–Channel Silicon JFET Transistor AF Amplifier/Chopper/Switch

文件：22.56 Kbytes 页数：2 Pages

NTE

Silicon P-Channel JFET Transistor AF Amp

Absolute Maximum Ratings: Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Reverse Gate–Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Gate Current, IG . . . . . . .

文件：21.48 Kbytes 页数：2 Pages

NTE

Silicon N−Channel JFET Transistor Dual, Matched Pair DC Amp/Sampler/Chopper

Features: • High Input Impedance: IG

文件：83.16 Kbytes 页数：2 Pages

NTE

Silicon Complementary MOSFET Transistors Enhancement Mode for Switching Applications

Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . ±30V Gate Current, IG

文件：23.16 Kbytes 页数：2 Pages

NTE

Silicon Complementary MOSFET Transistors Enhancement Mode for Switching Applications

Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . ±30V Gate Current, IG

文件：23.16 Kbytes 页数：2 Pages

NTE

Silicon N-Channel JFET Transistor Chopper, High Speed Switch

Applications: • Analog Switches • Choppers • Commutators

文件：21.06 Kbytes 页数：2 Pages

NTE

Silicon N-Channel JFET Transistor Chopper, High Speed Switch

Applications: • Analog Switches • Choppers • Commutators Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Drain–Gate Voltage, VDG . . . . . . . . . . . . .

文件：21.06 Kbytes 页数：2 Pages

NTE

Silicon NPN Transistor RF Power Output

Description: The NTE470 is a silicon NPN RF transistor in a W52 type package designed primarily for application as a high–power linear amplifier from 2.0 to 30MHz. Features: • Specified 12.5V, 30MHz Characteristics: Output Power = 100W (PEP) Minimum Gain = 10dB Efficie

文件：24.06 Kbytes 页数：2 Pages

NTE

Silicon NPN Transistor RF Power Output PO = 100W @ 30MHz

Description: The NTE471 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes state–of–the–art diffused emitter ballasting for improved ruggedness and reliability. Features: • Better than 15dB Gain at 30MHz and 100W (CW/PEP)

文件：23.06 Kbytes 页数：2 Pages

NTE

Silicon NPN Transistor RF Power Output PO = 1.8W @ 175MHz

Description: The NTE472 is a silicon NPN transistor designed for amplifier, frequency multiplier or oscillator applications in military, mobile marine and citizens band equipment. Suitable for use as output driver or pre–driver stages in VHF and UHF equipment. Features: • Specified 12.5

文件：21.98 Kbytes 页数：2 Pages

NTE