Silicon NPN Transistor RF High Frequency Amplifier

Description: The NTE486 is a silicon NPN high frequency RF transistor in a TO39 type package designed for use in 12.5V UHF large–signal applications required in industrial equipment. Features: • Specified 12.5V, 470MHz Characteristics: Output Power = 0.75W Minimum Gain = 8dB

文件：23.55 Kbytes 页数：2 Pages

NTE

Surge Clamping, Transient Overvoltage Suppressor Unidirectional

Description: The NTE4800 Series of high power transient suppressors are Silicon PN Junction devices designed for absorbtion of high voltage transients associated with power disturbances, switching and induced lighting effects. These devices were designed to be used on the output of switching po

文件：21.07 Kbytes 页数：2 Pages

NTE

Silicon NPN Transistor RF Power Output

Description: The NTE488 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power Amplifiers on VHF band mobile radio applications. Features: • High Power Gain: Gpe ≥ 10.7dB @ VCC = 13.5V, PO = 3.5W, f = 175MHz • TO39 Metal Sealed Package for High Reliability • Em

文件：21.93 Kbytes 页数：2 Pages

NTE

Silicon P-Channel JFET Transistor General Purpose AF Amplifier

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Gate–Drain Voltage (Note 1), VGD . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate–Source Voltage (Note 1), VGS . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate Current, IG . . . . . . . . . . . . .

文件：21.57 Kbytes 页数：2 Pages

NTE

Silicon Complementary Transistors General Purpose, High Voltage Amp, Driver

Description: The NTE49 (NPN) and NTE50 (PNP) are silicon complementary transistors in a TO202 type case designed for general purpose, high voltage amplifier and driver applications. Features: • High Collector Breakdown Voltage: V(BR)CEO = 100V Min @ IC = 1mA • High Power Dissipation:

文件：27.23 Kbytes 页数：2 Pages

NTE

Surge Clamping, Overvoltage Transient Suppressor, Unidirectional

Description: The NTE4900 is a zener overvoltage transient suppressor in an axial lead type package designed to protect voltage sensitive components from high voltage, high energy transients. This device has excellent clamping capability, high surge capability, low zener impedance, and fast resp

文件：20.13 Kbytes 页数：2 Pages

NTE

Surge Clamping, Transient Overvoltage Suppressor Unidirectional

Description: The NTE4900 series of silicon Transient Suppressors designed to protect voltage sensitive components from high energy voltage transients. Transient over voltage suppressor devices have become very important as a consequence of their high surge capability, extremely fast response time

文件：26.04 Kbytes 页数：2 Pages

NTE

Surge Clamping, Transient Overvoltage Suppressor Bidirectiona

Description: The NTE4900 series of silicon Transient Suppressors designed to protect voltage sensitive components from high energy voltage transients. Transient over voltage suppressor devices have become very important as a consequence of their high surge capability, extremely fast response time

文件：26.12 Kbytes 页数：2 Pages

NTE

Surge Clamping, Transient Overvoltage Suppressor Bidirectional

Description: The NTE4900 series of silicon Transient Suppressors designed to protect voltage sensitive components from high energy voltage transients. Transient over voltage suppressor devices have become very important as a consequence of their high surge capability, extremely fast response time

文件：26.12 Kbytes 页数：2 Pages

NTE

Surge Clamping, Transient Overvoltage Suppressor Unidirectional

Description: The NTE4900 series of silicon Transient Suppressors designed to protect voltage sensitive components from high energy voltage transients. Transient over voltage suppressor devices have become very important as a consequence of their high surge capability, extremely fast response time

文件：26.04 Kbytes 页数：2 Pages

NTE