Silicon Complementary Transistors High Voltage Driver

Features: • High Breakdown Voltage • Large Current Capacity • Isolated Package Applications: • Color TV Audio Output • Converters • Inverters

文件：22.51 Kbytes 页数：2 Pages

NTE

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: • High DC Current Gain @ IC = 10A: hFE = 2400 Typ (NTE251) hFE = 4000

文件：26.18 Kbytes 页数：3 Pages

NTE

Silicon Complementary Transistors High Voltage Driver

Features: • High Breakdown Voltage • Large Current Capacity • Isolated Package Applications: • Color TV Audio Output • Converters • Inverters

文件：22.51 Kbytes 页数：2 Pages

NTE

Silicon NPN Transistor Video Output for HDTV

Features: • High Gain Bandwidth Product: fT = 400MHz Typ • High Breakdown Voltage: VCEO ≥ 250V Min • High Current • Low Reverse Transfer Capacitance and Excellent HF Response

文件：21.6 Kbytes 页数：2 Pages

NTE

Silicon Complementary Transistors High Speed Switch

Features: High Current Capacity High Collector–Emitter Saturation Voltage

文件：23.62 Kbytes 页数：2 Pages

NTE

Silicon Complementary Transistors High Speed Switch

Features: High Current Capacity High Collector–Emitter Saturation Voltage

文件：23.62 Kbytes 页数：2 Pages

NTE

Silicon Complementary Transistors High Current Switch

Features: • Low Collector–Emitter Saturation Voltage • High Current and High fT • Excellent Linearity of hFE • Fast Switching Time

文件：22.91 Kbytes 页数：2 Pages

NTE

Silicon Complementary Transistors High Current Switch

Features: • Low Collector–Emitter Saturation Voltage • High Current and High fT • Excellent Linearity of hFE • Fast Switching Time

文件：22.91 Kbytes 页数：2 Pages

NTE

Silicon Complementary Transistors High Current Switch

Features: • Low Collector–Emitter Saturation Voltage • High Current and High fT • Excellent Linearity of hFE • Fast Switching Time

文件：22.88 Kbytes 页数：2 Pages

NTE

Silicon Complementary Transistors High Current Switch

Features: • Low Collector–Emitter Saturation Voltage • High Current and High fT • Excellent Linearity of hFE • Fast Switching Time

文件：22.88 Kbytes 页数：2 Pages

NTE