NTE25

Silicon Complementary Transistors General Purpose Amplifier, Switch

Description: TheNTE24(NPN)andNTE25(PNP)arecomplementarysilicontransistorsinaTO237typepackagedesignedforgeneralpurposemediumpoweramplifierandswitchingcircuitsthatrequirecollectorcurrentsto1A. Features: •HighCollector–EmitterBreakdownVoltage:VCEO=80V

NTE250

Silicon Complementary Transistors Darlington Power Amplifier

Description: TheNTE249(NPN)andNTE250(PNP)aresiliconcomplementaryDarlingtontransistorsinaTO3typecasedesignedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features: •HighDCCurrentGain:hFE=3500Typ@IC=10A •MonolithicCons

NTE2501

Silicon Complementary Transistors High Voltage for Video Output

Features: •HighBreakdownVoltage •ExcellentHighFrequencyCharacteristics Applications: •HighDefinitionCRTDisplay •ColorTVChromaOutput,HighBreakdownVoltageDrivers

NTE2502

Silicon Complementary Transistors High Voltage for Video Output

Features: •HighBreakdownVoltage •ExcellentHighFrequencyCharacteristics Applications: •HighDefinitionCRTDisplay •ColorTVChromaOutput,HighBreakdownVoltageDrivers

NTE2503

Silicon NPN Transistor High Gain Switch

Features: •HighDCCurrentGain •HighCurrentCapacity •LowCollector–EmitterSaturationVoltage •HighEmitter–BaseVoltage Applications: •AFAmplifier •VariousDriver

NTE2504

Silicon NPN Transistor High Gain Audio Amplifier

Features: •LargeCurrentCapacity(IC=2A) •AdoptionofMBITProcess •HighDCCurrentGain:hFE=800to3200 •LowCollector–EmitterSaturationVoltage:VCE(sat)

NTE2505

Silicon NPN Transistor Low Frequency, General Purpose Amp

Features: ●HighCurrentCapacity ●HighDCCurrentGain ●LowCollectorEmitterSaturationVoltage ●HighEmitterBaseBreakdownVoltage AbsoluteMaximumRatings:(TA=+25°Cunlessotherwisespecified) Collector–BaseVoltage,VCBO.......................

NTE2506

Silicon NPN Transistor High Frequency Video Driver

Description: TheNTE2506isasiliconNPNepitaxialtransistorinaTO126typepackagedesignedforuseinthecascodestageofthedriverforhigh–resolutioncolorgraphicsmonitors. Features: HighBreakdownVoltage LowOutputCapacitance

NTE2508

Silicon Complementary Transistors Video Output for HDTV

Features: •HighGainBandwidthProduct:fT=500MHz •HighBreakdownVoltage:VCEO=120VMin •LowReverseTransferCapacitanceandExcellentHFResponse Applications: •High–DefinitionCRTDisplayVideoOutput •Wide–BandAmp

NTE2509

Silicon Complementary Transistors Video Output for HDTV

Features: •HighGainBandwidthProduct:fT=500MHz •HighBreakdownVoltage:VCEO=120VMin •LowReverseTransferCapacitanceandExcellentHFResponse Applications: •High–DefinitionCRTDisplayVideoOutput •Wide–BandAmp