Silicon Complementary Transistors General Purpose Amplifier, Switch

Description: The NTE24 (NPN) and NTE25 (PNP) are complementary silicon transistors in a TO237 type package designed for general purpose medium power amplifier and switching circuits that require collector currents to 1A. Features: • High Collector–Emitter Breakdown Voltage: VCEO = 80V

文件：22.26 Kbytes 页数：2 Pages

NTE

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE249 (NPN) and NTE250 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in complementary general purpose amplifier applications. Features: • High DC Current Gain: hFE = 3500 Typ @ IC = 10A • Monolithic Cons

文件：25.18 Kbytes 页数：2 Pages

NTE

Silicon Complementary Transistors High Voltage for Video Output

Features: • High Breakdown Voltage • Excellent High Frequency Characteristics Applications: • High Definition CRT Display • Color TV Chroma Output, High Breakdown Voltage Drivers

文件：21.83 Kbytes 页数：2 Pages

NTE

Silicon Complementary Transistors High Voltage for Video Output

Features: • High Breakdown Voltage • Excellent High Frequency Characteristics Applications: • High Definition CRT Display • Color TV Chroma Output, High Breakdown Voltage Drivers

文件：21.83 Kbytes 页数：2 Pages

NTE

Silicon NPN Transistor High Gain Switch

Features: • High DC Current Gain • High Current Capacity • Low Collector–Emitter Saturation Voltage • High Emitter–Base Voltage Applications: • AF Amplifier • Various Driver

文件：22.23 Kbytes 页数：2 Pages

NTE

Silicon NPN Transistor High Gain Audio Amplifier

Features: • Large Current Capacity (IC = 2A) • Adoption of MBIT Process • High DC Current Gain: hFE = 800 to 3200 • Low Collector–Emitter Saturation Voltage: VCE(sat)

文件：20.16 Kbytes 页数：2 Pages

NTE

Silicon NPN Transistor Low Frequency, General Purpose Amp

Features: ● High Current Capacity ● High DC Current Gain ● Low Collector Emitter Saturation Voltage ● High Emitter Base Breakdown Voltage Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . .. . . . . .

文件：22.33 Kbytes 页数：2 Pages

NTE

Silicon NPN Transistor High Frequency Video Driver

Description: The NTE2506 is a silicon NPN epitaxial transistor in a TO126 type package designed for use in the cascode stage of the driver for high–resolution color graphics monitors. Features: High Breakdown Voltage Low Output Capacitance

文件：21.12 Kbytes 页数：2 Pages

NTE

Silicon Complementary Transistors Video Output for HDTV

Features: • High Gain Bandwidth Product: fT = 500MHz • High Breakdown Voltage: VCEO = 120V Min • Low Reverse Transfer Capacitance and Excellent HF Response Applications: • High–Definition CRT Display Video Output • Wide–Band Amp

文件：21.44 Kbytes 页数：2 Pages

NTE

Silicon Complementary Transistors Video Output for HDTV

Features: • High Gain Bandwidth Product: fT = 500MHz • High Breakdown Voltage: VCEO = 120V Min • Low Reverse Transfer Capacitance and Excellent HF Response Applications: • High–Definition CRT Display Video Output • Wide–Band Amp

文件：21.44 Kbytes 页数：2 Pages

NTE