Silicon Complementary Transistors High Power, Low Collector Saturation Voltage Power Output

Features: • High Power in a Compact ATR Package: PO = 1W Applications: • Regulated Power Supplies • 1 to 2W Output Stages • Drivers

文件：19.74 Kbytes 页数：2 Pages

NTE

Integrated Circuit Dolby B Type Noise Reduction System

Integrated Circuit Dolby B Type Noise Reduction System Absolute Maximum Ratings: (TA= +25°C unless otherwise specified) Supply Voltage, VCC . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . .16V Total Power Dissipation, PT . . . . . . . .. . . . . . .

文件：82.5 Kbytes 页数：2 Pages

NTE

Integrated Circuit Dolby B-Type Noise Reduction Processor

Description: The NTE2003 is a monolithic integrated circuit in a 16–Lead DIP type package specifically designed to realized the Dolby B–type noise reduction system. Features: • Reduced distortion at high frequencies and high signal levels • Improved transient stability • Wide Oper

文件：23.74 Kbytes 页数：2 Pages

NTE

Integrated Circuit Dolby Noise Reduction Circuit

Description: The NTE2004 is a monolithic audio noise reduction circuit in a 16–Lead DIP type package designed for use in Dolby B–Type noise reduction systems. This device is used to reduce the level of back ground noise introduced during recording and playback of audio signals on magnetic tape

文件：24.9 Kbytes 页数：2 Pages

NTE

Integrated Circuit 7-Channel Darlington Array/Driver

Description: The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic sub strate. All units have open–collector outputs and integral diodes for inductive load transie

文件：23.62 Kbytes 页数：3 Pages

NTE

Integrated Circuit 7-Channel Darlington Array/Driver

Description: The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic sub strate. All units have open–collector outputs and integral diodes for inductive load transie

文件：23.62 Kbytes 页数：3 Pages

NTE

Integrated Circuit 7-Channel Darlington Array/Driver

Description: The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic sub strate. All units have open–collector outputs and integral diodes for inductive load transie

文件：23.62 Kbytes 页数：3 Pages

NTE

Integrated Circuit 7-Channel Darlington Array/Driver

Description: The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic sub strate. All units have open–collector outputs and integral diodes for inductive load transie

文件：23.62 Kbytes 页数：3 Pages

NTE

Integrated Circuit 7-Channel Darlington Array/Driver

Description: The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic sub strate. All units have open–collector outputs and integral diodes for inductive load transie

文件：23.62 Kbytes 页数：3 Pages

NTE

Integrated Circuit 8-Channel Darlington Array/Driver

Description: Ideally suited for interfacing between low–level digital logic circuitry and high–power peripheral loads, the NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in an 18–Lead DIP type package and feature peak load current ratings to 600mA (NTE2016, NTE2019) or

文件：24.1 Kbytes 页数：3 Pages

NTE