Integrated Circuit Audio Power Amplifier, 5.8W

Description: The NTE1285 and NTE1286 are audio power amplifiers in a 7–Lead SIP type package designed especially for car radio and car stereo applications. These devices are encapsulated in newly developed small packages featuring low thermal resistance, providing easy design for 2Ω. At 14.4V t

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NTE

Integrated Circuit Audio Power Amplifier, 5.8W

Description:\nThe NTE1285 and NTE1286 are audio power amplifiers in a 7–Lead SIP type package designed especially for car radio and car stereo applications. These devices are encapsulated in newly developed small packages featuring low thermal resistance, providing easy design for 2Ω. At 14.4V the d

NTE

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1285 is a 12.5 V epitaxial NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. ■ 30 MHz ■ 12.5 VOLTS ■ COMMON EMITTER ■ GOLD METALLIZATION ■ I

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STMICROELECTRONICS

意法半导体

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI SD1285 is Designed for broadband operation in commercial and amateur communication equipment up to 30 MHz. FEATURES: • PG = 15 dB min. at 20 W/30 MHz • IMD = -30 dBc max. at 20 W(PEP) • Omnigold™ Metalization System • Emitter Ballasting

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ASI

GaAlAs Infrared Emitting Diodes

DESCRIPTION This 5 mm diameter, custom lensed device contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED chip. The custom lens allows this cost effective device to have a very narrow half power beam emission of ±8°.

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PERKINELMER