首页 >NTE1332>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
RockerSwitch,multiplecontactarrangement | APEX-ELECTRONICS Apex Electronics Co., Ltd | APEX-ELECTRONICS | ||
Multi-Conductor-DataBus짰ISA/SP-50FOUNDATIONFieldbusorPROFIBUSCable | BELDENBelden Inc. 百通电缆设计科技有限公司 | BELDEN | ||
General-PurposeSwitchingDeviceApplications General-PurposeSwitchingDeviceApplications Features •LowON-resistance. •Ultrahigh-speedswitching. •1.8Vdrive. •Halogenfreecompliance. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
P-ChannelPowerMOSFET Features •LowON-resistance •Ultrahigh-speedswitching •1.8Vdrive •Halogenfreecompliance | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
P-ChannelPowerMOSFET Features •LowON-resistance •Ultrahigh-speedswitching •1.8Vdrive •Halogenfreecompliance | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
TheIndustrysHighestPower670nmBandLaserDiodeAchieves500mWOpticalPowerOutput TheIndustrysHighestPower670nmBandLaserDiodeAchieves500mWOpticalPowerOutput | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
670nm,500mWLASERDIODE Description TheSLD1332Visahighpowervisiblelaserdiode. Thislaserdiodehashighbrightness500mWwhichcanbeachievedbyQWstructure. Features •Highoutputpower Recommendedopticalpoweroutput:Pop=500mW •QWstructure •9mmCan-typePackage Application •Measurement | SonySony Semiconductor Solutions Group 索尼 | Sony | ||
N-ChannelEnhancementModePowerMos.FET | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
UnipolarHallSwitch-LowSensitivity | SECELECTRONICS SEC Electronics Inc. | SECELECTRONICS | ||
UnipolarHallSwitch-LowSensitivity | SECELECTRONICS SEC Electronics Inc. | SECELECTRONICS |
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