NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI SD1285 is Designed for broadband operation in commercial and amateur communication equipment up to 30 MHz. FEATURES: • PG = 15 dB min. at 20 W/30 MHz • IMD = -30 dBc max. at 20 W(PEP) • Omnigold™ Metalization System • Emitter Ballasting

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ASI

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1285 is a 12.5 V epitaxial NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. ■ 30 MHz ■ 12.5 VOLTS ■ COMMON EMITTER ■ GOLD METALLIZATION ■ I

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STMICROELECTRONICS

意法半导体

12.5 VOLTS

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ELEFLOW

Trans GP BJT NPN 18V 4.5A 4-Pin(4+Tab) Case M-113

NJS

新泽西半导体