Integrated Circuit FM IF Amplifier

Description: The NTE1082 is a silicon monolithic integrated circuit intended for usa as a three−stage FM IF amplifier having exceptionally high voltage gain and limiting characteristics. From pin 1 the stabilized voltage can be applied to the mixer stage.

文件：77.39 Kbytes 页数：2 Pages

NTE

Integrated Circuit Hybrid, Dual High Gain Pre−Amplifier

Integrated Circuit Hybrid, Dual High Gain Pre−Amplifier

文件：82.74 Kbytes 页数：1 Pages

NTE

Integrated Circuit Low Noise Audio Preamp

Features: • Low Noise: VNI = 0.8µVrms(Typ) • High Open Loop Voltage Gain: GVO = 92dB (Typ) • Low Distortion: THD = 0.1 (Max) at VOUT = 7Vrms, GV = 40dB, f= 1kHz

文件：18.15 Kbytes 页数：2 Pages

NTE

Integrated Circuit Low Noise Preamp

Description: • General–Purpose Pre–Amplifier • Voltage Amplifier Application • Low Noise • Operates from a Wide Range of Power Supplies • High Voltage Gain

文件：18 Kbytes 页数：2 Pages

NTE

Germanium Diode Fast Switching General Purpose

Description: The NTE109 is a high conductance device with good switching characteristics for low impedance circuits, high resistance–high conductance for efficient coupling, clamping and matrix service, and forward and inverse pulse recovery for critical pulse applications.

文件：18.86 Kbytes 页数：1 Pages

NTE

Integrated Circuit TV AFT, High Frequency Wide-Band Amplifier/Phase Detector

Description: The NTE1096 is an IC for use in TV circuits, especially for Automatic Frequency Tuning. It contains a wide−band amplifier and phase detector. Features: ● VCC of 100V ±10 due to Dual Zener Regulation

文件：77.84 Kbytes 页数：2 Pages

NTE

Integrated Circuit Audio Power Amplifier, 5W

Features: ● 4−Watt Power Output into 4Ω Load at VCC = −14V, THD = 10 ● Low Distortion (0.4 typ. at f = 1kHz, PO = 2W) ● High Efficiency (60 at 4W) ● Transformerless in Input and Output Sides Applications: ● Car Stereo ● Car Radio

文件：80.02 Kbytes 页数：2 Pages

NTE

Integrated Circuit Chroma Demodulator

Integrated Circuit Chroma Demodulator

文件：82.71 Kbytes 页数：2 Pages

NTE

Silicon Complementary Transistors High Current Amplifier

Description: The NTE11 (NPN) and NTE12 (PNP) are silicon complementary transistors in a TO92 type case designed for use in low–frequency output amplifier, DC converter, and strobe applications. Features: • High Collector Current: IC = 5A Max • Low Collector–Emitter Saturation Voltage

文件：22.74 Kbytes 页数：2 Pages

NTE

Integrated Circuit TV Sound IF Amp, FM IF Amp

Features: • High Power Gain: GP = 69dB (Typ) • Good Limiter Characteristic: VIN (lim) = 600µV (Typ) • High Output Voltage: VOM = 800V (Typ) • Wide Frequency Range: f = 1kHz to 20MHz • Operating Supply Voltage Range: VCC = 6V to 15V

文件：22.37 Kbytes 页数：2 Pages

NTE