isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 79A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：279.72 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：06NG；Package：IPAK；Power MOSFET 30 V, 76 A, Single N--Channel, DPAK/IPAK

Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable − NVD4806N • These Devices are Pb−Free and are RoHS

文件：297.49 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

N-Channel 30-V (D-S) MOSFET

文件：995.68 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

TO-252-3

ON

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TO-252

ON安森美

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