isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 124A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.6mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.2 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET 25 V, 128 A, Single N-Channel, DPAK/IPAK

文件：105.12 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 124A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.6mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：317.71 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET 25 V, 128 A, Single N-Channel, DPAK/IPAK

文件：105.12 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Power MOSFET 25 V, 128 A, Single N-Channel, DPAK/IPAK

文件：105.12 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Power MOSFET 25 V, 128 A, Single N-Channel, DPAK/IPAK

文件：105.12 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Power MOSFET 25 V, 124 A, Single N-Channel

Power MOSFET25 V, 124 A, Single N-Channel • Trench Technology\n• These are Pb-Free Devices\n• DC-DC Converters\n• Low Rds(on)\n• Low Capacitance\n• Optimized Gate Charge;

ONSEMI

安森美半导体

Power MOSFET 25 V, 128 A, Single N-Channel, DPAK/IPAK

ONSEMI

安森美半导体