isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 76A@ TC=25℃ ·Drain Source Voltage -VDSS= 16V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.7mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：260.44 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET 16 V, 51 A, Single N-Channel, DPAK/IPAK

文件：100.17 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 76A@ TC=25℃ ·Drain Source Voltage -VDSS= 16V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.7mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：278.9 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET 16 V, 51 A, Single N-Channel, DPAK/IPAK

文件：100.17 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Power MOSFET 16 V, 51 A, Single N-Channel, DPAK/IPAK

文件：100.17 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Power MOSFET 16 V, 51 A, Single N-Channel, DPAK/IPAK

文件：100.17 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Power MOSFET 16V, 51A Single N-Channel

Power MOSFET 16V, 51A, Single N-Channel\n\n • Low Rds(on)\n• Optimized Gate Charge\n• Pb-Free\n\n;

ONSEMI

安森美半导体

Power MOSFET 16 V, 51 A, Single N-Channel, DPAK/IPAK

ONSEMI

安森美半导体