Power MOSFET 30 V, 117 A, Single N--Channel, DPAK/IPAK

MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 117 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC Q101 Qualified − NVD4804N • These Devices are Pb−Free and are RoHS Compliant A

文件：280.79 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Power MOSFET

文件：95.35 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

N-Channel 30-V (D-S) MOSFET

文件：995.7 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

TO-252-3

ON

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TO-252

ON安森美

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