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NTD4805N

MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 88 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

文件:250.3 Kbytes 页数:9 Pages

ONSEMI

安森美半导体

NTD4805N

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 95A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:260.06 Kbytes 页数:2 Pages

ISC

无锡固电

NTD4805N

Power MOSFET 30 V, 88 A, Single N?묬hannel, DPAK/IPAK

文件:80.75 Kbytes 页数:8 Pages

ONSEMI

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NTD4805N_V01

MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 88 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

文件:250.3 Kbytes 页数:9 Pages

ONSEMI

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NTD4805N-1

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 95A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:278.61 Kbytes 页数:2 Pages

ISC

无锡固电

NTD4805N-1G

MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 88 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

文件:250.3 Kbytes 页数:9 Pages

ONSEMI

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NTD4805NT4G

MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 88 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

文件:250.3 Kbytes 页数:9 Pages

ONSEMI

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NTD4805NT4G

N-channel Enhancement Mode Power MOSFET

Features  VDS= 30V, ID= 150A RDS(ON)

文件:1.07126 Mbytes 页数:5 Pages

BYCHIP

百域芯

NTD4805N_14

Power MOSFET

文件:122.57 Kbytes 页数:8 Pages

ONSEMI

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NTD4805N-1G

Power MOSFET

文件:122.57 Kbytes 页数:8 Pages

ONSEMI

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技术参数

  • Pb-free:

    Pb

  • Halide free:

    H

  • Status:

    Active

  • Channel Polarity:

    N-Channel

  • Configuration:

    Single

  • V(BR)DSS Min (V):

    30

  • VGS Max (V):

    20

  • VGS(th) Max (V):

    2.5

  • ID Max (A):

    88

  • PD Max (W):

    2.65

  • RDS(on) Max @ VGS = 4.5 V(mΩ):

    7.4

  • RDS(on) Max @ VGS = 10 V(mΩ):

    5

  • Qg Typ @ VGS = 4.5 V (nC):

    11.3

  • Qg Typ @ VGS = 10 V (nC):

    48

  • Ciss Typ (pF):

    2865

  • Package Type:

    DPAK-3

供应商型号品牌批号封装库存备注价格
ON
24+
TO-252
5000
全现原装公司现货
询价
ON
23+
TO-252
11846
一级代理商现货批发,原装正品,假一罚十
询价
ON/安森美
20+
TO-252
36900
原装优势主营型号-可开原型号增税票
询价
ON
25+
TO-252/D-PAK
32500
普通
询价
ON/安森美
23+
TO-252
50000
全新原装正品现货,支持订货
询价
ON/安森美
25+
TO-252
10000
原装现货假一罚十
询价
ON/安森美
2022+
TO-252
32500
原厂代理 终端免费提供样品
询价
ON
21+
TO-252
10
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
ON
23+
TO-252
10
正规渠道,只有原装!
询价
ON
2022+
DPAK-3
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
更多NTD4805N供应商 更新时间2026-4-14 10:19:00