NTD360N80S3Z中文资料MOSFET – Power, N-Channel, SUPERFET® III, 800 V, 13 A, 360 mΩ, DPAK数据手册ONSEMI规格书

描述 Description

800 V SUPERFET III MOSFET is ON Semiconductor’s high performance MOSFET family offering 800 V breakdown voltage. New 800 V SUPERFET III MOSFET which is optimized for primary switch of flyback converter, enables lower switching losses and case temperature without sacrificing EMI performance thanks to its optimized design. In addition, internal Zener Diode significantly
improves ESD capability. This new family of 800 V SUPERFET III MOSFET enables to make more efficient, compact, cooler and more robust applications because of its remarkable performance in switching power applications such as Laptop adapter, Audio, Lighting, ATX power and industrial
power supplies.

特性 Features

• Typ. RDS(on) = 300 mΩ
• Low switching loss, High efficiency
• Ultra Low Gate Charge (Typ. Qg = 25.3 nC)
• Good EMI performance
• Low Stored Energy in Output Capacitance (Eoss = 2.72 µJ @ 400 V)
• Improved ESD capability with internal Zener Diode
• 100% Avalanche Tested
• ESD Improved Capability with Zener Diode
• RoHS Compliant

应用 Application

• Adapters / Chargers
• LED Lighting
• AUX Power
• Audio
• Industrial Power
• Adapters / Chargers
• LED Lighting
• AUX Power
• Audio
• Industrial Power