丝印：NTD360N80S3Z；Package：TO-252；MOSFET ??Power, N-Channel, SUPERFET III 800 V, 360 m, 13 A

文件：261.589 Kbytes 页数：9 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 13A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.36Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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MOSFET – Power, N-Channel, SUPERFET® III, 800 V, 13 A, 360 mΩ, DPAK

800 V SUPERFET III MOSFET is ON Semiconductor’s high performance MOSFET family offering 800 V breakdown voltage. New 800 V SUPERFET III MOSFET which is optimized for primary switch of flyback converter, enables lower switching losses and case temperature without sacrificing EMI performance thanks to • Typ. RDS(on) = 300 mΩ\n• Low switching loss, High efficiency\n• Ultra Low Gate Charge (Typ. Qg = 25.3 nC)\n• Good EMI performance\n• Low Stored Energy in Output Capacitance (Eoss = 2.72 µJ @ 400 V)\n• Improved ESD capability with internal Zener Diode\n• 100% Avalanche Tested\n• ESD Improved Ca;

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MOSFET ??Power, N-Channel, SUPERFET III 800 V, 360 m, 13 A

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安森美半导体

MOSFET ??Power, N-Channel, SUPERFET III 800 V, 360 m, 13 A

文件：148.38 Kbytes 页数：8 Pages

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