NTBL075N065SC1数据手册ONSEMI中文资料规格书

描述 Description

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. The TOLL package offers improved thermal performance and excellent switching performance thanks to Kelvin Source configuration and lower parasitic source inductance. TOLL offers Moisture Sensitivity Level 1 (MSL 1).

特性 Features

• Max Junction Temperature 175°C
• Leadless thin SMD package
• Kelvin Source Configuration
• Ultra Low Gate Charge (Qg(tot) = 59 nC)
• Low Effective Output Capacitance (Coss = 109 pF)
• Zero reverse recovery current of body diode
• Typ. RDS(on) = 57 mΩ @ Vgs : 18V
• 650V rated
• 100% Avalanche Tested
• Pb−Free, Halogen Free/BFR Free and RoHS Compliant
• Moisture Sensitivity Level 1 guarantee
• Internal Gate Resistance: 5.6 Ω

应用 Application

• Telecommunication
• Cloud system
• Industrial