NTB33N10其他被动元件数据手册贸易商VBSEMI-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
33N10	文件：67.44 Kbytes Page：2 Pages	FastSwitching	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
33N10	文件：245.5 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQA33N10	文件：363.3 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=36A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=52mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQA33N10	文件：566.72 Kbytes Page：8 Pages	100VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQA33N10L	文件：642.58 Kbytes Page：8 Pages	100VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwi	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQA33N10L	文件：363.31 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=36A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=52mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQAF33N10	文件：421.47 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=25.8A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.052Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQAF33N10	文件：571.55 Kbytes Page：8 Pages	100VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQAF33N10L	文件：647.27 Kbytes Page：8 Pages	100VLOGICN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB33N10	文件：309.54 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQB33N10	文件：585.35 Kbytes Page：9 Pages	100VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB33N10	文件：330.83 Kbytes Page：9 Pages	100VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB33N10	文件：1.23197 Mbytes Page：9 Pages	N-ChannelQFETMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB33N10L	文件：317.36 Kbytes Page：2 Pages	N-ChannelMOSFET FEATURES ·DrainCurrent-ID=33A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.052Ω(Max)@VGS=10V APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·DC-DCConverters ·Motordrives	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQB33N10L	文件：660.05 Kbytes Page：9 Pages	100VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB33N10L	文件：1.89098 Mbytes Page：8 Pages	N-ChannelQFETMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB33N10L	文件：309.27 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQB33N10LTM	文件：1.89098 Mbytes Page：8 Pages	N-ChannelQFETMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQI33N10	文件：1.23197 Mbytes Page：9 Pages	N-ChannelQFETMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQI33N10	文件：330.83 Kbytes Page：9 Pages	100VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市威尔健半导体有限公司	NTB33N10其他被动元件	ON/安森美	23+	TO-263	50000	全新原装正品现货,支持订货	询价
深圳市科恒伟业电子有限公司	NTB33N10其他被动元件	ON/安森美	21+	D2PAK	9852	只做原装正品现货!或订货假一赔十!	询价
深圳市一线半导体有限公司	NTB35N15	ON	08+(pbfree)	D2PAK3LEAD	8866		询价
深圳市华来深电子有限公司	NTB35N15	ON	23+	TO-263	11846	一级代理商现货批发,原装正品,假一罚十	询价
深圳市近平电子有限公司	NTB35N15	ON	6000	面议	19	D2PAK3LEAD	询价
深圳市宏捷佳电子科技有限公司	NTB35N15	ON	23+	D2PAK3LEAD	37650	全新原装真实库存含13点增值税票!	询价
中天科工半导体（深圳）有限公司	NTB35N15	ON	20+	D2PAK3LEAD	36900	原装优势主营型号-可开原型号增税票	询价
深圳兆威电子有限公司	NTB35N15	ON	20+	TO-263	90000	全新原装正品/库存充足	询价
瀚佳科技(深圳)有限公司	NTB35N15	ONS	2020+	D2PAK	16800	绝对原装进口现货,假一赔十,价格优势!?	询价
深圳市百诺芯科技有限公司	NTB35N15	ON/安森美	23+	SOT-263	24190	原装正品代理渠道价格优势	询价

更多NTB33N10其他被动元件供应商更新时间2024-9-23 11:01:00

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