NSVJ5908DSG5中文资料N 沟道 JFET，-15 V，10 至 32 mA，35 mS，双数据手册ONSEMI规格书

描述 Description

Automotive JFET designed for compact and efficient designs and including high gain performance. AEC-Q101 qualified JFET and PPAP capable suitable for automotive applications.

特性 Features

• Composite type with 2 JFET contained
• Realize low distortion
• Large forward transfer admittance | yfs | and low noise figure NF
• Enabling the reception of radio waves in the small
• The NSVJ5908DSG5 is formed with two chips, being equivalent to the NSVJ3557SA3, placed in MCPH5 package.
• Improving the mounting efficiency greatly.
• Pb-Free, Halogen Free and RoHS compliance
• Environmental Consideration
• AEC-Q101 qualified and PPAP capable
• Suitable for automotive application.
• High power dissipation
• Enabled for use under high temperature.

应用 Application

• AM Tuner RFAmplifier
• Low Noise Amplifier
• Car Tuner
• Automotive Antenna

简介

NSVJ5908DSG5属于分立半导体产品的晶体管-JFET。由制造生产的NSVJ5908DSG5晶体管 - JFET结栅场效应晶体管 (JFET) 是用作电子控制开关、放大器或电压控制电阻器的器件。在栅极端子与源极端子之间施加适当极性的电势差就会增加电流流动的阻力，这意味着源极端子与漏极端子之间通道中流动的电流会更少。由于电荷流过源极与漏极端子之间的半导体通道，因此 JFET 不需要偏置电流。