NSVF6003SB6中文资料射频晶体管，NPN 单，12 V，150 mA，fT = 7 GHz数据手册ONSEMI规格书

描述 Description

This RF transistor is designed for low noise amplifier applications. CPH package is suitable for use under high temperature environment because it has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications.

特性 Features

• AEC-Q101 qualified and PPAP capable
• Suitable for automotive applications
• Pb-Free, Halogen Free and RoHS compliance
• Environmental consideration
• High Current (IC = 150 mA)
• Realize a low distorted characteristic
• Ultra miniature and thin 6 pin package
• Superiorheat radiation characteristics
• Large Collector Dissipation (800 mW)
• Enable movement under the high temperature environment
• High Gain (fT = 7 GHz typ)

应用 Application

• Low Noise Amplifier
• Car FM Radio
• TV for Automotive

简介

NSVF6003SB6属于分立半导体产品的晶体管-双极（BJT）-射频。由制造生产的NSVF6003SB6晶体管 - 双极（BJT）- 射频双极型射频晶体管是一种具有三个端子的半导体器件，用于在涉及射频的设备中开关或放大信号。双极结型晶体管设计为 NPN 或 PNP，特征参数包括晶体管类型、集射极击穿电压、跃迁频率、噪声系数、增益、功率、DC 电流增益和集电极电流。