NSVF3007SG3中文资料用于低噪声放大器的 RF 晶体管数据手册ONSEMI规格书

描述 Description

This RF transistor is designed for low noise amplifier applications. MCPH package is suitable for use under high temperature environment because it has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications.

特性 Features

• Low-noise use : NF = 1.2 dB (typ) [f = 1 GHz]
• Realize the clear signal amplification
• High cut-off frequency : fT = 8 GHz (typ) [VCE = 5 V]
• Aveirable forhigh frequency application
• High gain : |S21e|2 = 12 dB (typ) [f = 1 GHz]
• Useful for the reception of the small signal
• AEC-Q101 qualified and PPAP capable
• Suitable for automotive application
• MCPH3 package is pin-compatible with SC-70FL
• Reduce PCB mount area
• Pb-Free, Halogen Free and RoHS compliance
• Environmental consideration
• Low current operating
• Useful for long lifetime of the battery

应用 Application

• Low Noise Amplifier
• RF Amplifier
• FM Radio Antenna
• Remote Keyless Entry System (RKE)
• ADAS

简介

NSVF3007SG3属于分立半导体产品的晶体管-双极（BJT）-射频。由制造生产的NSVF3007SG3晶体管 - 双极（BJT）- 射频双极型射频晶体管是一种具有三个端子的半导体器件，用于在涉及射频的设备中开关或放大信号。双极结型晶体管设计为 NPN 或 PNP，特征参数包括晶体管类型、集射极击穿电压、跃迁频率、噪声系数、增益、功率、DC 电流增益和集电极电流。