RF Transistor 12 V, 100 mA, fT = 6.7 GHz, NPN Single

文件：873.32 Kbytes 页数：7 Pages

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安森美半导体

射频晶体管，NPN 单，12 V，100 mA，fT = 6.7 GHz

This RF transistor is designed for low noise amplifier applications. CPH package is suitable for use under high temperature environment because it has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications. • High Current (IC = 100 mA)\n• Realize a low distorted characteristic\n• Ultra miniature and thin 6 pin package\n• Superior heat radiation characteristics\n• High Collector Dissipation (800 mW)\n• Enable movement under the high temperature environment\n• Pb-Free, Halogen Free and RoHS compliance\n•;

ONSEMI

安森美半导体

RF Transistor 12 V, 100 mA, fT = 6.7 GHz, NPN Single

文件：873.32 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Package：SOT-23-6 细型，TSOT-23-6；包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 0.1A 12V MCPH6

ONSEMI

安森美半导体