NST857BF3T5G中文资料PNP Bipolar Transistor数据手册ONSEMI规格书

描述 Description

The PNP Bipolar Transistor is a spin-off of our popular SOT23, SOT323, SOT563, SOT-963 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT 1123 surface mount package. This device is ideal for low power surface mount applications, where board space is at a premium.

特性 Features

• hFE, 220-475
• Low VCE(sat),
• Reduces Board Space
• This is a Pb-Free Device

应用 Application

• PNP General Purpose Transistor

简介

NST857BF3T5G属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由ONSEMI制造生产的NST857BF3T5G晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。