SPECIFICATIONS FOR NICHIA CHIP TYPE WARM WHITE LED

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NICHIA

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SPECIFICATIONS FOR NICHIA CHIP TYPE BLUE LED

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NICHIA

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SPECIFICATIONS FOR NICHIA CHIP TYPE GREEN LED

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NICHIA

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SPECIFICATIONS FOR NICHIA CHIP TYPE WARM WHITE LED

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NICHIA

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丝印：NSS1001G；Package：LFPAK8；Bipolar Transistor -100 V, -2.5 A, Low VCE(sat) PNP Single LFPAK

This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for automotive applications. AEC−Q101 qualified and PPAP capable. (NSVS1001CLTWG) Features • Complement to NSS1002CL • Large Current Capacitance • Low Collector to

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ONSEMI

安森美半导体

丝印：NSS1002G；Package：LFPAK8；Bipolar Transistor 100 V, 2.5 A, Low VCE(sat) NPN Single LFPAK

This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for automotive applications. AEC−Q101 qualified and PPAP capable. (NSVS1002CLTWG) Features • Complement to NSS1001CL • Large Current Capacitance • Low Collector to E

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ONSEMI

安森美半导体

Bipolar Transistor 100V, 2.5A Low VCE(sat) NPN Single LFPAK8 3.3x3.3

This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for automotive applications, AEC-Q101 qualified, PPAP capable. • Large current capacity\n• Enables design easily\n• Low collector to emitter saturation voltage\n• Improves efficiency in operation\n• High speed switching\n• Improves efficiency in operation\n• High allowable power dissipation\n• Enables design easily;

ONSEMI

安森美半导体

低 VCE(sat) 晶体管，PNP，12 V，1.0 A

Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. • High Continuous Current Capability\n• Low VCE(sat) (typically 150mV at 500mA)\n• Small Size 1.2 mm x 1.2 mm\n• This is a Pb-Free Device;

ONSEMI

安森美半导体

Low VCE(sat) Transistor, PNP, 12 V, 1.0 A

ON Semiconductor's e2PowerEdge family of Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient en • High Current Capability (1 A)\n• Low VCE(s) (200 mV Typical @ 500 mA)\n• Low Noise\n• High Specific Current and Power Capability Reduces Required PCB Area\n• Digital cameras and MP3 players\n;

ONSEMI

安森美半导体

包装：散装 类别：电源 - 板安装 直流转换器 描述：DC DC CONVERTER

ABB Power Electronics Inc.