Gallium Nitride 28V, 25W RF Power Transistor

For load-pull data and non-linear models, please send an e-mail to applications@macom.com. ·Optimized for Broadband Operation from DC-4000MHz\n·High Efficiency from 14 - 28V\n·10-20W P3dB CW Power from 30-1000MHz in application board with >50% drain efficiency\n·16-20W P3dB CW Power from 1000-2500MHz in application board with >45% drain efficiency\n·25W P3dB CW Power at 3000MHz\n·;

MACOM

Next generation high power RF semiconductor technology

文件：12.93189 Mbytes 页数：9 Pages

MA-COM

包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：HEMT N-CH 28V 25W DC-4000MHZ

MACOM Technology Solutions

VTB Process Photodiodes

PRODUCT DESCRIPTION Small area planar silicon photodiode in a “flat” window, dual lead TO-46 package. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response.

文件：27.29 Kbytes 页数：1 Pages

PERKINELMER

VTB Process Photodiodes

PRODUCT DESCRIPTION Small area planar silicon photodiode in a “flat” window, dual lead TO-46 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response.

文件：27.55 Kbytes 页数：1 Pages

PERKINELMER

VTP Process Photodiodes

PRODUCT DESCRIPTION Small area planar silicon photodiode in a “flat” window TO-46 package. Cathode is common to the case. These diodes exhibit low dark current under reverse bias and fast speed of response.

文件：26.02 Kbytes 页数：1 Pages

PERKINELMER