SWITCHING P-CHANNEL POWER MOSFET

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RENESAS

瑞萨

-60V – -83A – P-channel Power MOS FET Application : Automotive

Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance : RDS(on) = 8.8 m Max. ( VGS = -10 V, ID = -41.5 A ) RDS(on) = 12 m Max. ( VGS = -4.5 V, ID = -41.5 A )  Low input capacitance : Ciss

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RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP83P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 8.8 mΩ MAX. (VGS = −10 V, ID = −41.5 A) RDS(on)2 = 12 mΩ MAX. (VGS = −4.5 V, ID = −41.5 A) • High current rating: ID

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NEC

瑞萨

SOP-8

南麟

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14-SOIC 模块

Amphenol Advanced Sensors

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