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NP82N06CLD

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=8.5mW(MAX.)(VGS=10V,ID

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP82N06CLC

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=9.0mW(MAX.)(VGS=10V,ID=4

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP82N06DLC

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=9.0mW(MAX.)(VGS=10V,ID=4

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP82N06DLD

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=8.5mW(MAX.)(VGS=10V,ID

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP82N06ELC

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=9.0mW(MAX.)(VGS=10V,ID=4

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP82N06ELD

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=8.5mW(MAX.)(VGS=10V,ID

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP82N06MLG

ProductScoutAutomotive

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP82N06MLG

N-Channel60V(D-S)MOSFET

FEATURES •175°CJunctionTemperature •TrenchFET®PowerMOSFET •Materialcategorization:

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

NP82N06MLG

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP82N06MLGandNP82N06NLGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Logiclevel •Built-ingateprotectiondiode •Superlowon-stateresistance RDS(on)1=7.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=9.7

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP82N06NLG

ProductScoutAutomotive

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP82N06NLG

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP82N06MLGandNP82N06NLGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Logiclevel •Built-ingateprotectiondiode •Superlowon-stateresistance RDS(on)1=7.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=9.7

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP82N06PDG

SWITCHINGN-CHANNELPOWERMOSFET

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP82N06PDG

ProductScoutAutomotive

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP82N06PLG

SWITCHINGN-CHANNELPOWERMOSFET

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NP82N06PLG

ProductScoutAutomotive

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

供应商型号品牌批号封装库存备注价格
R
24+
TO-220
5000
只做原装公司现货
询价
达高TECCOR
23+
TO-220
69820
终端可以免费供样,支持BOM配单!
询价
R
23+
TO-220
10000
公司只做原装正品
询价
VB
21+
TO-220
10000
原装现货假一罚十
询价
RENESAS/瑞萨
23+
TO-220
89630
当天发货全新原装现货
询价
RENESAS/瑞萨
22+
TO-220
12500
瑞萨全系列在售,终端可出样品
询价
NEC-日本电气
24+25+/26+27+
TO-220-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
R
23+
TO-TO-220
33500
全新原装真实库存含13点增值税票!
询价
NEC
MP-25SKTO-262
33000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
RENESAS(瑞萨)/IDT
23+
TO262
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
更多NP82N06CLD供应商 更新时间2024-6-18 10:20:00