MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES · Channel Temperature 175 degree rated · Super Low On-state Resistance RDS(on)1 = 8.5 mW (MAX.) (VGS = 10 V, ID

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 82A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

Power MOSFETs-Power MOSFETs for Automotive

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP82N06MLG and NP82N06NLG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Logic level • Built-in gate protection diode • Super low on-state resistance RDS(on)1 = 7.4 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 9.7

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP82N06MLG and NP82N06NLG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Logic level • Built-in gate protection diode • Super low on-state resistance RDS(on)1 = 7.4 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 9.7

文件：326.03 Kbytes 页数：10 Pages

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SWITCHING N-CHANNEL POWER MOS FET

文件：203.32 Kbytes 页数：8 Pages

NEC

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