MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 24 A) RDS(on)2 = 21 mΩ MAX. (VGS = 5 V, ID = 24 A) RDS(on)3 = 24 mΩ MAX. (VGS = 4.5 V, ID = 24 A) • Low input capacitance Ciss = 1970

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MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 24 A) RDS(on)2 = 21 mΩ MAX. (VGS = 5 V, ID = 2

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NEC

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SWITCHING N-CHANNEL POWER MOS FET

文件：308.03 Kbytes 页数：12 Pages

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SOP-8

南麟

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14-SOIC 模块

Amphenol Advanced Sensors

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