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NP11	文件：100 bytes Page：1 Pages	包装：散装类别：工具钳子描述：PLIERS,11\	XceliteApex Tool Group 顶点工具组	Xcelite
NP110N03PUG	文件：344.51 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=110A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.7mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NP110N04PDG	文件：344.33 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=110A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NP110N04PUG	文件：344.34 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=110A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NP110N04PUJ	文件：344.46 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=110A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NP110N04PUJ	文件：318.28 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheNP110N04PUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)=1.8mΩMAX.(VGS=10V,ID=55A) •Lowinputcapacitance Ciss=9500pFTYP. •Designedforautomotiveapplicati	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP110N04PUJ-E1B-AY	文件：318.28 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheNP110N04PUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)=1.8mΩMAX.(VGS=10V,ID=55A) •Lowinputcapacitance Ciss=9500pFTYP. •Designedforautomotiveapplicati	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP110N04PUJ-E2B-AY	文件：318.28 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheNP110N04PUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)=1.8mΩMAX.(VGS=10V,ID=55A) •Lowinputcapacitance Ciss=9500pFTYP. •Designedforautomotiveapplicati	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP110N04PUK	文件：113.76 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP110N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ●Superlowon-stateresistance RDS(on)=1.4mΩMAX.(VGS=10V,ID=55A) ●LowCiss:Ciss=10500pFTYP.(VDS=25V) Designedforautomotiveapplicatio	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP110N04PUK	文件：271.53 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP110N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=1.4mMAX.(VGS=10V,ID=55A) LowCiss:Ciss=10500pFTYP.(VDS=25V) Designedforautomotiveapplication	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP110N04PUK	文件：345.03 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=110A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.4mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
NP110N04PUK_V01	文件：271.53 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP110N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=1.4mMAX.(VGS=10V,ID=55A) LowCiss:Ciss=10500pFTYP.(VDS=25V) Designedforautomotiveapplication	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP110N04PUK-E1-AY	文件：113.76 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP110N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ●Superlowon-stateresistance RDS(on)=1.4mΩMAX.(VGS=10V,ID=55A) ●LowCiss:Ciss=10500pFTYP.(VDS=25V) Designedforautomotiveapplicatio	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP110N04PUK-E1-AY	文件：271.53 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP110N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=1.4mMAX.(VGS=10V,ID=55A) LowCiss:Ciss=10500pFTYP.(VDS=25V) Designedforautomotiveapplication	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP110N04PUK-E2-AY	文件：113.76 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP110N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ●Superlowon-stateresistance RDS(on)=1.4mΩMAX.(VGS=10V,ID=55A) ●LowCiss:Ciss=10500pFTYP.(VDS=25V) Designedforautomotiveapplicatio	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP110N04PUK-E2-AY	文件：271.53 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP110N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=1.4mMAX.(VGS=10V,ID=55A) LowCiss:Ciss=10500pFTYP.(VDS=25V) Designedforautomotiveapplication	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP110N055PUK	文件：133.76 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP110N055PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=1.75mΩMAX.(VGS=10V,ID=55A) •LowCiss:Ciss=10700pFTYP.(VDS=25V) •Designedforautomotiveapplicati	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP110N055PUK	文件：267.97 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP110N055PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=1.75mMAX.(VGS=10V,ID=55A) LowCiss:Ciss=10700pFTYP.(VDS=25V) Designedforautomotiveapplicatio	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP110N055PUK_V01	文件：267.97 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP110N055PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=1.75mMAX.(VGS=10V,ID=55A) LowCiss:Ciss=10700pFTYP.(VDS=25V) Designedforautomotiveapplicatio	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
NP110N055PUK-E1-AY	文件：133.76 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR Description TheNP110N055PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=1.75mΩMAX.(VGS=10V,ID=55A) •LowCiss:Ciss=10700pFTYP.(VDS=25V) •Designedforautomotiveapplicati	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS

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产品属性

产品编号：
NP11
制造商：
Apex Tool Group
类别：
工具 > 钳子
包装：
散装
工具类型：
标准
尖头 - 类型：
平头
尖头 - 形状：
直形
钳口 - 类型：
有齿
长度：
11.00"（279.4mm）
描述：
PLIERS,11\

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市易讯博科技有限公司	NP11	Apex	1824+	NA	16	加我QQ或微信咨询更多详细信息,	询价
深圳市勤思达科技有限公司	NP110N055PUG	NEC	1415+	TO-263	28500	全新原装正品,优势热卖	询价
深圳市凯斯宇科技有限公司	NP110N04PDG-E1-AY	RENESAS	2022	TO263	2400	原厂原装正品,价格超越代理	询价
深圳市卓越微芯电子有限公司	NP110N04PDG-E1-AY	RENESAS	2020+	TO263	3985	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市博浩通科技有限公司	NP110N03PUG	NEC	23+	TO-263	11843	全新原装	询价
深圳市一线半导体有限公司	NP110N055PUG	NEC	08+(pbfree)	TO-263	8866		询价
深圳市鹏和科技有限公司	NP110N055PUG	NEC	24+	SOT-263	5000	只做原装公司现货	询价
深圳市华来深电子有限公司	NP119AB	NPL	23+	BGA	8560	受权代理!全新原装现货特价热卖!	询价
深圳市振宏微科技有限公司	NP110N04PUG-E1-AZ	RENESAS	23+	NA	1186	专做原装正品,假一罚百!	询价
深圳市华斯顿科技有限公司	NP110N04PDG-E1-AY	RENESAS	22+23+	TO-263	9338	绝对原装正品全新进口深圳现货	询价

更多NP11供应商更新时间2024-6-4 10:08:00

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